KSC2001GTA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Rochester Electronics, LLC stock available on our website
SOT-23
KSC2001GTA Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mounting Type
Through Hole
Package / Case
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Surface Mount
NO
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tape & Box (TB)
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Terminal Finish
MATTE TIN
Terminal Position
BOTTOM
Peak Reflow Temperature (Cel)
NOT APPLICABLE
Reach Compliance Code
unknown
[email protected] Reflow Temperature-Max (s)
NOT APPLICABLE
JESD-30 Code
O-PBCY-T3
Qualification Status
COMMERCIAL
Number of Elements
1
Configuration
SINGLE
Power - Max
600mW
Polarity/Channel Type
NPN
Transistor Type
NPN
DC Current Gain (hFE) (Min) @ Ic, Vce
200 @ 100mA 1V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
600mV @ 70mA, 700mA
Voltage - Collector Emitter Breakdown (Max)
25V
Current - Collector (Ic) (Max)
700mA
Transition Frequency
170MHz
Frequency - Transition
170MHz
RoHS Status
ROHS3 Compliant
KSC2001GTA Product Details
KSC2001GTA Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 200 @ 100mA 1V.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 600mV @ 70mA, 700mA.There is a transition frequency of 170MHz in the part.The device has a 25V maximal voltage - Collector Emitter Breakdown.
KSC2001GTA Features
the DC current gain for this device is 200 @ 100mA 1V the vce saturation(Max) is 600mV @ 70mA, 700mA a transition frequency of 170MHz
KSC2001GTA Applications
There are a lot of Rochester Electronics, LLC KSC2001GTA applications of single BJT transistors.