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MMBTA92LT3

MMBTA92LT3

MMBTA92LT3

ON Semiconductor

MMBTA92LT3 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

MMBTA92LT3 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2007
JESD-609 Code e0
Pbfree Code no
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin/Lead (Sn/Pb)
HTS Code 8541.21.00.95
Subcategory Other Transistors
Voltage - Rated DC -300V
Max Power Dissipation 300mW
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Current Rating -500mA
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number MMBTA92
Pin Count 3
Qualification Status Not Qualified
Number of Elements 1
Element Configuration Single
Power - Max 300mW
Gain Bandwidth Product 600MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 500mV
Max Collector Current 500mA
DC Current Gain (hFE) (Min) @ Ic, Vce 25 @ 30mA 10V
Current - Collector Cutoff (Max) 250nA ICBO
Vce Saturation (Max) @ Ib, Ic 500mV @ 2mA, 20mA
Collector Emitter Breakdown Voltage 300V
Transition Frequency 50MHz
Collector Emitter Saturation Voltage -500mV
Frequency - Transition 50MHz
Collector Base Voltage (VCBO) -300V
Emitter Base Voltage (VEBO) 3V
hFE Min 20
RoHS Status Non-RoHS Compliant
Lead Free Contains Lead
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.021489 $0.021489
500 $0.015801 $7.9005
1000 $0.013167 $13.167
2000 $0.012080 $24.16
5000 $0.011290 $56.45
10000 $0.010502 $105.02
15000 $0.010157 $152.355
50000 $0.009987 $499.35
MMBTA92LT3 Product Details

MMBTA92LT3 Overview


DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 25 @ 30mA 10V DC current gain.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of -500mV.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 500mV @ 2mA, 20mA.If the emitter base voltage is kept at 3V, a high level of efficiency can be achieved.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (-500mA).50MHz is present in the transition frequency.In extreme cases, the collector current can be as low as 500mA volts.

MMBTA92LT3 Features


the DC current gain for this device is 25 @ 30mA 10V
a collector emitter saturation voltage of -500mV
the vce saturation(Max) is 500mV @ 2mA, 20mA
the emitter base voltage is kept at 3V
the current rating of this device is -500mA
a transition frequency of 50MHz

MMBTA92LT3 Applications


There are a lot of ON Semiconductor MMBTA92LT3 applications of single BJT transistors.

  • Interface
  • Driver
  • Muting
  • Inverter

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