MMBTA92LT3 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
MMBTA92LT3 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2007
JESD-609 Code
e0
Pbfree Code
no
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin/Lead (Sn/Pb)
HTS Code
8541.21.00.95
Subcategory
Other Transistors
Voltage - Rated DC
-300V
Max Power Dissipation
300mW
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Reach Compliance Code
not_compliant
Current Rating
-500mA
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Base Part Number
MMBTA92
Pin Count
3
Qualification Status
Not Qualified
Number of Elements
1
Element Configuration
Single
Power - Max
300mW
Gain Bandwidth Product
600MHz
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
500mV
Max Collector Current
500mA
DC Current Gain (hFE) (Min) @ Ic, Vce
25 @ 30mA 10V
Current - Collector Cutoff (Max)
250nA ICBO
Vce Saturation (Max) @ Ib, Ic
500mV @ 2mA, 20mA
Collector Emitter Breakdown Voltage
300V
Transition Frequency
50MHz
Collector Emitter Saturation Voltage
-500mV
Frequency - Transition
50MHz
Collector Base Voltage (VCBO)
-300V
Emitter Base Voltage (VEBO)
3V
hFE Min
20
RoHS Status
Non-RoHS Compliant
Lead Free
Contains Lead
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.021489
$0.021489
500
$0.015801
$7.9005
1000
$0.013167
$13.167
2000
$0.012080
$24.16
5000
$0.011290
$56.45
10000
$0.010502
$105.02
15000
$0.010157
$152.355
50000
$0.009987
$499.35
MMBTA92LT3 Product Details
MMBTA92LT3 Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 25 @ 30mA 10V DC current gain.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of -500mV.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 500mV @ 2mA, 20mA.If the emitter base voltage is kept at 3V, a high level of efficiency can be achieved.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (-500mA).50MHz is present in the transition frequency.In extreme cases, the collector current can be as low as 500mA volts.
MMBTA92LT3 Features
the DC current gain for this device is 25 @ 30mA 10V a collector emitter saturation voltage of -500mV the vce saturation(Max) is 500mV @ 2mA, 20mA the emitter base voltage is kept at 3V the current rating of this device is -500mA a transition frequency of 50MHz
MMBTA92LT3 Applications
There are a lot of ON Semiconductor MMBTA92LT3 applications of single BJT transistors.