MMDFS6N303R2

new-10%

Manufacturer part number:MMDFS6N303R2

Manufacturer:ON Semiconductor

Description:MOSFET N-CH 30V 6A 8-SOIC

Case Package:SOT-23

Datasheet:MMDFS6N303R2 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-SOIC (0.154, 3.90mm Width)
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2004
Series	FETKY™
JESD-609 Code	e0
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	8
ECCN Code	EAR99
Terminal Finish	Tin/Lead (Sn/Pb)
Additional Feature	LOGIC LEVEL COMPATIBLE
Subcategory	FET General Purpose Powers
Voltage - Rated DC	30V
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Reach Compliance Code	not_compliant
Current Rating	6A
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	8
JESD-30 Code	R-PDSO-G8
Qualification Status	Not Qualified
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	2W Ta
Operating Mode	ENHANCEMENT MODE
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	35m Ω @ 5A, 10V
Vgs(th) (Max) @ Id	1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	600pF @ 24V
Current - Continuous Drain (Id) @ 25°C	6A Ta
Gate Charge (Qg) (Max) @ Vgs	31.4nC @ 10V
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Continuous Drain Current (ID)	6A
Drain Current-Max (Abs) (ID)	6A
Drain-source On Resistance-Max	0.035Ohm
Pulsed Drain Current-Max (IDM)	30A
Avalanche Energy Rating (Eas)	325 mJ
RoHS Status	Non-RoHS Compliant
Lead Free	Contains Lead