MMJT9435T1 Overview

As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 125 @ 800mA 1V.A collector emitter saturation voltage of 155mV allows maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.The emitter base voltage can be kept at 6V for high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a -3A current rating.Parts of this part have transition frequencies of 110MHz.Single BJT transistor can be broken down at a voltage of 30V volts.When collector current reaches its maximum, it can reach 3A volts.

MMJT9435T1 Features

the DC current gain for this device is 125 @ 800mA 1V
a collector emitter saturation voltage of 155mV
the vce saturation(Max) is 550mV @ 300mA, 3A
the emitter base voltage is kept at 6V
the current rating of this device is -3A
a transition frequency of 110MHz

MMJT9435T1 Applications

There are a lot of ON Semiconductor MMJT9435T1 applications of single BJT transistors.

• Interface
• Muting
• Driver
• Inverter