2SC4505T100P datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ROHM Semiconductor stock available on our website
SOT-23
2SC4505T100P Datasheet
non-compliant
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Specifications
Name
Value
Type
Parameter
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-243AA
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Published
2000
JESD-609 Code
e2
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Termination
SMD/SMT
ECCN Code
EAR99
Terminal Finish
TIN COPPER
HTS Code
8541.21.00.95
Subcategory
Other Transistors
Voltage - Rated DC
400V
Max Power Dissipation
2W
Terminal Form
FLAT
Peak Reflow Temperature (Cel)
260
Current Rating
100mA
[email protected] Reflow Temperature-Max (s)
10
Base Part Number
2SC4505
Pin Count
3
Number of Elements
1
Element Configuration
Single
Power Dissipation
500mW
Case Connection
COLLECTOR
Transistor Application
SWITCHING
Gain Bandwidth Product
20MHz
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
500mV
Max Collector Current
100mA
DC Current Gain (hFE) (Min) @ Ic, Vce
82 @ 10mA 10V
Current - Collector Cutoff (Max)
10μA ICBO
Vce Saturation (Max) @ Ib, Ic
500mV @ 1mA, 10mA
Collector Emitter Breakdown Voltage
400V
Transition Frequency
20MHz
Max Breakdown Voltage
400V
Collector Base Voltage (VCBO)
400V
Emitter Base Voltage (VEBO)
7V
hFE Min
82
VCEsat-Max
0.5 V
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.097040
$0.09704
500
$0.071353
$35.6765
1000
$0.059461
$59.461
2000
$0.054551
$109.102
5000
$0.050982
$254.91
10000
$0.047425
$474.25
15000
$0.045866
$687.99
50000
$0.045099
$2254.95
2SC4505T100P Product Details
2SC4505T100P Overview
DC current gain in this device equals 82 @ 10mA 10V, which is the ratio of the base current to the collector current.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 500mV @ 1mA, 10mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 7V.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.Single BJT transistor contains a transSingle BJT transistorion frequency of 20MHz.An input voltage of 400V volts is the breakdown voltage.A maximum collector current of 100mA volts is possible.
2SC4505T100P Features
the DC current gain for this device is 82 @ 10mA 10V the vce saturation(Max) is 500mV @ 1mA, 10mA the emitter base voltage is kept at 7V the current rating of this device is 100mA a transition frequency of 20MHz
2SC4505T100P Applications
There are a lot of ROHM Semiconductor 2SC4505T100P applications of single BJT transistors.