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2SC4505T100P

2SC4505T100P

2SC4505T100P

ROHM Semiconductor

2SC4505T100P datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ROHM Semiconductor stock available on our website

SOT-23

2SC4505T100P Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-243AA
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature150°C TJ
PackagingTape & Reel (TR)
Published 2000
JESD-609 Code e2
Pbfree Code yes
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Termination SMD/SMT
ECCN Code EAR99
Terminal Finish TIN COPPER
HTS Code8541.21.00.95
Subcategory Other Transistors
Voltage - Rated DC 400V
Max Power Dissipation2W
Terminal FormFLAT
Peak Reflow Temperature (Cel) 260
Current Rating100mA
[email protected] Reflow Temperature-Max (s) 10
Base Part Number 2SC4505
Pin Count3
Number of Elements 1
Element ConfigurationSingle
Power Dissipation500mW
Case Connection COLLECTOR
Transistor Application SWITCHING
Gain Bandwidth Product20MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 500mV
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 82 @ 10mA 10V
Current - Collector Cutoff (Max) 10μA ICBO
Vce Saturation (Max) @ Ib, Ic 500mV @ 1mA, 10mA
Collector Emitter Breakdown Voltage400V
Transition Frequency 20MHz
Max Breakdown Voltage 400V
Collector Base Voltage (VCBO) 400V
Emitter Base Voltage (VEBO) 7V
hFE Min 82
VCEsat-Max 0.5 V
Radiation HardeningNo
REACH SVHC No SVHC
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:1731 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.097040$0.09704
500$0.071353$35.6765
1000$0.059461$59.461
2000$0.054551$109.102
5000$0.050982$254.91
10000$0.047425$474.25
15000$0.045866$687.99
50000$0.045099$2254.95

2SC4505T100P Product Details

2SC4505T100P Overview


DC current gain in this device equals 82 @ 10mA 10V, which is the ratio of the base current to the collector current.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 500mV @ 1mA, 10mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 7V.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.Single BJT transistor contains a transSingle BJT transistorion frequency of 20MHz.An input voltage of 400V volts is the breakdown voltage.A maximum collector current of 100mA volts is possible.

2SC4505T100P Features


the DC current gain for this device is 82 @ 10mA 10V
the vce saturation(Max) is 500mV @ 1mA, 10mA
the emitter base voltage is kept at 7V
the current rating of this device is 100mA
a transition frequency of 20MHz

2SC4505T100P Applications


There are a lot of ROHM Semiconductor 2SC4505T100P applications of single BJT transistors.

  • Interface
  • Inverter
  • Muting
  • Driver

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