MPS650RLRA Overview

DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 75 @ 1A 2V DC current gain.The collector emitter saturation voltage is 500mV, which allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.With the emitter base voltage set at 5V, an efficient operation can be achieved.This device has a current rating of 2A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.Single BJT transistor contains a transSingle BJT transistorion frequency of 75MHz.When collector current reaches its maximum, it can reach 2A volts.

MPS650RLRA Features

the DC current gain for this device is 75 @ 1A 2V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 200mA, 2A
the emitter base voltage is kept at 5V
the current rating of this device is 2A
a transition frequency of 75MHz

MPS650RLRA Applications

There are a lot of ON Semiconductor MPS650RLRA applications of single BJT transistors.

• Driver
• Inverter
• Interface
• Muting