MPS6717RLRA Overview

The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 50 @ 250mA 1V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 500mV.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 500mV @ 10mA, 250mA.The base voltage of the emitter can be kept at 5V to achieve high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a 500mA current rating.Parts of this part have transition frequencies of 50MHz.When collector current reaches its maximum, it can reach 500mA volts.

MPS6717RLRA Features

the DC current gain for this device is 50 @ 250mA 1V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 10mA, 250mA
the emitter base voltage is kept at 5V
the current rating of this device is 500mA
a transition frequency of 50MHz

MPS6717RLRA Applications

There are a lot of ON Semiconductor MPS6717RLRA applications of single BJT transistors.

• Inverter
• Muting
• Interface
• Driver