MPS750G Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 75 @ 1A 2V.This design offers maximum flexibility with a collector emitter saturation voltage of 500mV.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).An emitter's base voltage can be kept at 5V to gain high efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 1A.75MHz is present in the transition frequency.Single BJT transistor is possible to have a collector current as low as 2A volts at Single BJT transistors maximum.
MPS750G Features
the DC current gain for this device is 75 @ 1A 2V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 200mA, 2A
the emitter base voltage is kept at 5V
the current rating of this device is 1A
a transition frequency of 75MHz
MPS750G Applications
There are a lot of ON Semiconductor MPS750G applications of single BJT transistors.
- Interface
- Inverter
- Muting
- Driver
