MPS8099RLRAG Overview

As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 100 @ 1mA 5V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 400mV.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 400mV @ 5mA, 100mA.The emitter base voltage can be kept at 4V for high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a 500mA current rating.In the part, the transition frequency is 150MHz.Single BJT transistor can take a breakdown input voltage of 80V volts.Maximum collector currents can be below 500mA volts.

MPS8099RLRAG Features

the DC current gain for this device is 100 @ 1mA 5V
a collector emitter saturation voltage of 400mV
the vce saturation(Max) is 400mV @ 5mA, 100mA
the emitter base voltage is kept at 4V
the current rating of this device is 500mA
a transition frequency of 150MHz

MPS8099RLRAG Applications

There are a lot of ON Semiconductor MPS8099RLRAG applications of single BJT transistors.

• Muting
• Inverter
• Driver
• Interface