MJW0302A datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Rochester Electronics, LLC stock available on our website
SOT-23
MJW0302A Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mounting Type
Through Hole
Package / Case
TO-247-3
Surface Mount
NO
Transistor Element Material
SILICON
Operating Temperature
-65°C~150°C TJ
Packaging
Tube
JESD-609 Code
e0
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Terminal Finish
TIN LEAD
Terminal Position
SINGLE
Pin Count
3
JESD-30 Code
R-PSFM-T3
Qualification Status
COMMERCIAL
Number of Elements
1
Configuration
SINGLE
Case Connection
COLLECTOR
Power - Max
150W
Transistor Application
AMPLIFIER
Polarity/Channel Type
PNP
Transistor Type
PNP
DC Current Gain (hFE) (Min) @ Ic, Vce
75 @ 3A 5V
Current - Collector Cutoff (Max)
10μA ICBO
JEDEC-95 Code
TO-247AD
Vce Saturation (Max) @ Ib, Ic
1V @ 500mA, 5A
Voltage - Collector Emitter Breakdown (Max)
260V
Current - Collector (Ic) (Max)
15A
Transition Frequency
30MHz
Frequency - Transition
30MHz
RoHS Status
Non-RoHS Compliant
MJW0302A Product Details
MJW0302A Overview
This device has a DC current gain of 75 @ 3A 5V, which is the ratio between the collector current and the base current.When VCE saturation is 1V @ 500mA, 5A, transistor means Ic has reached transistors maximum value (saturated).Parts of this part have transition frequencies of 30MHz.A 260V maximal voltage - Collector Emitter Breakdown is present in the device.
MJW0302A Features
the DC current gain for this device is 75 @ 3A 5V the vce saturation(Max) is 1V @ 500mA, 5A a transition frequency of 30MHz
MJW0302A Applications
There are a lot of Rochester Electronics, LLC MJW0302A applications of single BJT transistors.