MPS8599RLRAG Overview
This device has a DC current gain of 100 @ 1mA 5V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 400mV.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).Keeping the emitter base voltage at 6V can result in a high level of efficiency.This device has a current rating of -500mA which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As a result, the part has a transition frequency of 150MHz.Input voltage breakdown is available at 80V volts.When collector current reaches its maximum, it can reach 500mA volts.
MPS8599RLRAG Features
the DC current gain for this device is 100 @ 1mA 5V
a collector emitter saturation voltage of 400mV
the vce saturation(Max) is 400mV @ 5mA, 100mA
the emitter base voltage is kept at 6V
the current rating of this device is -500mA
a transition frequency of 150MHz
MPS8599RLRAG Applications
There are a lot of ON Semiconductor MPS8599RLRAG applications of single BJT transistors.
- Driver
- Muting
- Inverter
- Interface
