BDP949E6327HTSA1 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Infineon Technologies stock available on our website
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BDP949E6327HTSA1 Datasheet
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Specifications
Name
Value
Type
Parameter
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-261-4, TO-261AA
Number of Pins
4
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Published
2011
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN Code
EAR99
Max Power Dissipation
5W
Frequency
100MHz
Base Part Number
BDP949
Number of Elements
1
Power Dissipation
5W
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
500mV
Max Collector Current
3A
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 500mA 1V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
500mV @ 200mA, 2A
Collector Emitter Breakdown Voltage
60V
Max Breakdown Voltage
60V
Collector Base Voltage (VCBO)
60V
Emitter Base Voltage (VEBO)
5V
Radiation Hardening
No
RoHS Status
RoHS Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.227147
$0.227147
10
$0.214290
$2.1429
100
$0.202160
$20.216
500
$0.190717
$95.3585
1000
$0.179922
$179.922
BDP949E6327HTSA1 Product Details
BDP949E6327HTSA1 Overview
This device has a DC current gain of 100 @ 500mA 1V, which is the ratio between the base current and the collector current.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.Breakdown input voltage is 60V volts.Collector current can be as low as 3A volts at its maximum.
BDP949E6327HTSA1 Features
the DC current gain for this device is 100 @ 500mA 1V the vce saturation(Max) is 500mV @ 200mA, 2A the emitter base voltage is kept at 5V
BDP949E6327HTSA1 Applications
There are a lot of Infineon Technologies BDP949E6327HTSA1 applications of single BJT transistors.