BDP949E6327HTSA1 Overview

This device has a DC current gain of 100 @ 500mA 1V, which is the ratio between the base current and the collector current.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.Breakdown input voltage is 60V volts.Collector current can be as low as 3A volts at its maximum.

BDP949E6327HTSA1 Features

the DC current gain for this device is 100 @ 500mA 1V
the vce saturation(Max) is 500mV @ 200mA, 2A
the emitter base voltage is kept at 5V

BDP949E6327HTSA1 Applications

There are a lot of Infineon Technologies BDP949E6327HTSA1 applications of single BJT transistors.

• Inverter
• Interface
• Driver
• Muting