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MPSA75RLRP

MPSA75RLRP

MPSA75RLRP

ON Semiconductor

MPSA75RLRP datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

MPSA75RLRP Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Transistor Element Material SILICON
Operating Temperature-55°C~150°C TJ
PackagingTape & Box (TB)
Published 2009
JESD-609 Code e0
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin/Lead (Sn/Pb)
HTS Code8541.21.00.95
Subcategory Other Transistors
Voltage - Rated DC -40V
Max Power Dissipation625mW
Terminal Position BOTTOM
Peak Reflow Temperature (Cel) 240
Reach Compliance Code not_compliant
Current Rating-500mA
[email protected] Reflow Temperature-Max (s) 30
Pin Count3
JESD-30 Code O-PBCY-T3
Qualification StatusNot Qualified
Number of Elements 1
Polarity PNP
Element ConfigurationSingle
Power Dissipation625mW
Transistor Application AMPLIFIER
Transistor Type PNP - Darlington
Collector Emitter Voltage (VCEO) 1.5V
Max Collector Current 500mA
DC Current Gain (hFE) (Min) @ Ic, Vce 10000 @ 100mA 5V
Current - Collector Cutoff (Max) 500nA
Vce Saturation (Max) @ Ib, Ic 1.5V @ 100μA, 100mA
Collector Emitter Breakdown Voltage40V
Transition Frequency 125MHz
Collector Base Voltage (VCBO) 40V
Emitter Base Voltage (VEBO) 10V
hFE Min 10000
Continuous Collector Current -500mA
RoHS StatusNon-RoHS Compliant
Lead Free Contains Lead
In-Stock:1472 items

MPSA75RLRP Product Details

MPSA75RLRP Overview


As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 10000 @ 100mA 5V.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).Continuous collector voltages of -500mA should be maintained to achieve high efficiency.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 10V.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is -500mA.Parts of this part have transition frequencies of 125MHz.During maximum operation, collector current can be as low as 500mA volts.

MPSA75RLRP Features


the DC current gain for this device is 10000 @ 100mA 5V
the vce saturation(Max) is 1.5V @ 100μA, 100mA
the emitter base voltage is kept at 10V
the current rating of this device is -500mA
a transition frequency of 125MHz

MPSA75RLRP Applications


There are a lot of ON Semiconductor MPSA75RLRP applications of single BJT transistors.

  • Driver
  • Inverter
  • Interface
  • Muting

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