MPSA77G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
MPSA77G Datasheet
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Specifications
Name
Value
Type
Parameter
Lifecycle Status
OBSOLETE (Last Updated: 19 hours ago)
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-226-3, TO-92-3 (TO-226AA)
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Bulk
Published
2007
JESD-609 Code
e1
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin/Silver/Copper (Sn/Ag/Cu)
Subcategory
Other Transistors
Voltage - Rated DC
-60V
Max Power Dissipation
625mW
Terminal Position
BOTTOM
Peak Reflow Temperature (Cel)
260
Current Rating
-500mA
[email protected] Reflow Temperature-Max (s)
40
Base Part Number
MPSA77
Pin Count
3
Qualification Status
Not Qualified
Number of Elements
1
Polarity
PNP
Element Configuration
Single
Power Dissipation
625mW
Transistor Application
AMPLIFIER
Transistor Type
PNP - Darlington
Collector Emitter Voltage (VCEO)
60V
Max Collector Current
500mA
DC Current Gain (hFE) (Min) @ Ic, Vce
10000 @ 100mA 5V
Current - Collector Cutoff (Max)
500nA
Vce Saturation (Max) @ Ib, Ic
1.5V @ 100μA, 100mA
Collector Emitter Breakdown Voltage
60V
Transition Frequency
125MHz
Collector Emitter Saturation Voltage
1.5V
Collector Base Voltage (VCBO)
60V
Emitter Base Voltage (VEBO)
10V
hFE Min
10000
Continuous Collector Current
-500mA
RoHS Status
RoHS Compliant
Lead Free
Lead Free
MPSA77G Product Details
MPSA77G Overview
This device has a DC current gain of 10000 @ 100mA 5V, which is the ratio between the collector current and the base current.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 1.5V.When VCE saturation is 1.5V @ 100μA, 100mA, transistor means Ic has reached transistors maximum value (saturated).In order to achieve high efficiency, the continuous collector voltage should be kept at -500mA.A high level of efficiency can be achieved if the base voltage of the emitter remains at 10V.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is -500mA.Single BJT transistor contains a transSingle BJT transistorion frequency of 125MHz.When collector current reaches its maximum, it can reach 500mA volts.
MPSA77G Features
the DC current gain for this device is 10000 @ 100mA 5V a collector emitter saturation voltage of 1.5V the vce saturation(Max) is 1.5V @ 100μA, 100mA the emitter base voltage is kept at 10V the current rating of this device is -500mA a transition frequency of 125MHz
MPSA77G Applications
There are a lot of ON Semiconductor MPSA77G applications of single BJT transistors.