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MPSA77G

MPSA77G

MPSA77G

ON Semiconductor

MPSA77G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

MPSA77G Datasheet

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Specifications
Name Value
Type Parameter
Lifecycle Status OBSOLETE (Last Updated: 19 hours ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA)
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Bulk
Published 2007
JESD-609 Code e1
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Subcategory Other Transistors
Voltage - Rated DC -60V
Max Power Dissipation 625mW
Terminal Position BOTTOM
Peak Reflow Temperature (Cel) 260
Current Rating -500mA
[email protected] Reflow Temperature-Max (s) 40
Base Part Number MPSA77
Pin Count 3
Qualification Status Not Qualified
Number of Elements 1
Polarity PNP
Element Configuration Single
Power Dissipation 625mW
Transistor Application AMPLIFIER
Transistor Type PNP - Darlington
Collector Emitter Voltage (VCEO) 60V
Max Collector Current 500mA
DC Current Gain (hFE) (Min) @ Ic, Vce 10000 @ 100mA 5V
Current - Collector Cutoff (Max) 500nA
Vce Saturation (Max) @ Ib, Ic 1.5V @ 100μA, 100mA
Collector Emitter Breakdown Voltage 60V
Transition Frequency 125MHz
Collector Emitter Saturation Voltage 1.5V
Collector Base Voltage (VCBO) 60V
Emitter Base Voltage (VEBO) 10V
hFE Min 10000
Continuous Collector Current -500mA
RoHS Status RoHS Compliant
Lead Free Lead Free
MPSA77G Product Details

MPSA77G Overview


This device has a DC current gain of 10000 @ 100mA 5V, which is the ratio between the collector current and the base current.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 1.5V.When VCE saturation is 1.5V @ 100μA, 100mA, transistor means Ic has reached transistors maximum value (saturated).In order to achieve high efficiency, the continuous collector voltage should be kept at -500mA.A high level of efficiency can be achieved if the base voltage of the emitter remains at 10V.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is -500mA.Single BJT transistor contains a transSingle BJT transistorion frequency of 125MHz.When collector current reaches its maximum, it can reach 500mA volts.

MPSA77G Features


the DC current gain for this device is 10000 @ 100mA 5V
a collector emitter saturation voltage of 1.5V
the vce saturation(Max) is 1.5V @ 100μA, 100mA
the emitter base voltage is kept at 10V
the current rating of this device is -500mA
a transition frequency of 125MHz

MPSA77G Applications


There are a lot of ON Semiconductor MPSA77G applications of single BJT transistors.

  • Muting
  • Interface
  • Inverter
  • Driver

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