MPSW45AZL1G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
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MPSW45AZL1G Datasheet
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Specifications
Name
Value
Type
Parameter
Lifecycle Status
LAST SHIPMENTS (Last Updated: 2 weeks ago)
Mounting Type
Through Hole
Package / Case
TO-226-3, TO-92-3 Long Body (Formed Leads)
Surface Mount
NO
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Box (TB)
Published
2010
JESD-609 Code
e1
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin/Silver/Copper (Sn/Ag/Cu)
Additional Feature
EUROPEAN PART NUMBER
Subcategory
Other Transistors
Voltage - Rated DC
50V
Max Power Dissipation
1W
Terminal Position
BOTTOM
Peak Reflow Temperature (Cel)
260
Current Rating
1A
[email protected] Reflow Temperature-Max (s)
40
Base Part Number
MPSW45A
Pin Count
3
Number of Elements
1
Polarity
NPN
Element Configuration
Single
Power Dissipation
1W
Transistor Application
AMPLIFIER
Transistor Type
NPN - Darlington
Collector Emitter Voltage (VCEO)
50V
Max Collector Current
1A
DC Current Gain (hFE) (Min) @ Ic, Vce
25000 @ 200mA 5V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
1.5V @ 2mA, 1A
Collector Emitter Breakdown Voltage
50V
Transition Frequency
100MHz
Collector Emitter Saturation Voltage
1.5V
Max Breakdown Voltage
40V
Frequency - Transition
100MHz
Collector Base Voltage (VCBO)
60V
Emitter Base Voltage (VEBO)
12V
Continuous Collector Current
1A
Radiation Hardening
No
RoHS Status
RoHS Compliant
Lead Free
Lead Free
MPSW45AZL1G Product Details
MPSW45AZL1G Overview
This device has a DC current gain of 25000 @ 200mA 5V, which is the ratio between the collector current and the base current.With a collector emitter saturation voltage of 1.5V, it offers maximum design flexibility.A VCE saturation (Max) of 1.5V @ 2mA, 1A means Ic has reached its maximum value(saturated).Continuous collector voltage should be kept at 1A for high efficiency.The base voltage of the emitter can be kept at 12V to achieve high efficiency.Its current rating is 1A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.In the part, the transition frequency is 100MHz.The breakdown input voltage is 40V volts.Collector current can be as low as 1A volts at its maximum.
MPSW45AZL1G Features
the DC current gain for this device is 25000 @ 200mA 5V a collector emitter saturation voltage of 1.5V the vce saturation(Max) is 1.5V @ 2mA, 1A the emitter base voltage is kept at 12V the current rating of this device is 1A a transition frequency of 100MHz
MPSW45AZL1G Applications
There are a lot of ON Semiconductor MPSW45AZL1G applications of single BJT transistors.