Welcome to Hotenda.com Online Store!

logo
userjoin
Home

MPSW45AZL1G

MPSW45AZL1G

MPSW45AZL1G

ON Semiconductor

MPSW45AZL1G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

MPSW45AZL1G Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Lifecycle Status LAST SHIPMENTS (Last Updated: 2 weeks ago)
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 Long Body (Formed Leads)
Surface MountNO
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature-55°C~150°C TJ
PackagingTape & Box (TB)
Published 2010
JESD-609 Code e1
Pbfree Code yes
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Additional FeatureEUROPEAN PART NUMBER
Subcategory Other Transistors
Voltage - Rated DC 50V
Max Power Dissipation1W
Terminal Position BOTTOM
Peak Reflow Temperature (Cel) 260
Current Rating1A
[email protected] Reflow Temperature-Max (s) 40
Base Part Number MPSW45A
Pin Count3
Number of Elements 1
Polarity NPN
Element ConfigurationSingle
Power Dissipation1W
Transistor Application AMPLIFIER
Transistor Type NPN - Darlington
Collector Emitter Voltage (VCEO) 50V
Max Collector Current 1A
DC Current Gain (hFE) (Min) @ Ic, Vce 25000 @ 200mA 5V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 1.5V @ 2mA, 1A
Collector Emitter Breakdown Voltage50V
Transition Frequency 100MHz
Collector Emitter Saturation Voltage1.5V
Max Breakdown Voltage 40V
Frequency - Transition 100MHz
Collector Base Voltage (VCBO) 60V
Emitter Base Voltage (VEBO) 12V
Continuous Collector Current 1A
Radiation HardeningNo
RoHS StatusRoHS Compliant
Lead Free Lead Free
In-Stock:2864 items

MPSW45AZL1G Product Details

MPSW45AZL1G Overview


This device has a DC current gain of 25000 @ 200mA 5V, which is the ratio between the collector current and the base current.With a collector emitter saturation voltage of 1.5V, it offers maximum design flexibility.A VCE saturation (Max) of 1.5V @ 2mA, 1A means Ic has reached its maximum value(saturated).Continuous collector voltage should be kept at 1A for high efficiency.The base voltage of the emitter can be kept at 12V to achieve high efficiency.Its current rating is 1A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.In the part, the transition frequency is 100MHz.The breakdown input voltage is 40V volts.Collector current can be as low as 1A volts at its maximum.

MPSW45AZL1G Features


the DC current gain for this device is 25000 @ 200mA 5V
a collector emitter saturation voltage of 1.5V
the vce saturation(Max) is 1.5V @ 2mA, 1A
the emitter base voltage is kept at 12V
the current rating of this device is 1A
a transition frequency of 100MHz

MPSW45AZL1G Applications


There are a lot of ON Semiconductor MPSW45AZL1G applications of single BJT transistors.

  • Interface
  • Inverter
  • Driver
  • Muting

Get Subscriber

Enter Your Email Address, Get the Latest News