2SD1758TLQ Overview

In this device, the DC current gain is 120 @ 500mA 3V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 800mV @ 200mA, 2A.A constant collector voltage of 2A is necessary for high efficiency.Emitter base voltages of 5V can achieve high levels of efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.Parts of this part have transition frequencies of 100MHz.There is a breakdown input voltage of 32V volts that it can take.A maximum collector current of 2A volts is possible.

2SD1758TLQ Features

the DC current gain for this device is 120 @ 500mA 3V
the vce saturation(Max) is 800mV @ 200mA, 2A
the emitter base voltage is kept at 5V
the current rating of this device is 2A
a transition frequency of 100MHz

2SD1758TLQ Applications

There are a lot of ROHM Semiconductor 2SD1758TLQ applications of single BJT transistors.

• Inverter
• Interface
• Driver
• Muting