MPSW63RLRAG Overview

In this device, the DC current gain is 10000 @ 100mA 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 1.5V, which allows maximum flexibilSingle BJT transistory in design.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 1.5V @ 100μA, 100mA.Continuous collector voltage should be kept at -500mA for high efficiency.An emitter's base voltage can be kept at 10V to gain high efficiency.Its current rating is -500mA, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.A transition frequency of 125MHz is present in the part.Collector current can be as low as 500mA volts at its maximum.

MPSW63RLRAG Features

the DC current gain for this device is 10000 @ 100mA 5V
a collector emitter saturation voltage of 1.5V
the vce saturation(Max) is 1.5V @ 100μA, 100mA
the emitter base voltage is kept at 10V
the current rating of this device is -500mA
a transition frequency of 125MHz

MPSW63RLRAG Applications

There are a lot of ON Semiconductor MPSW63RLRAG applications of single BJT transistors.

• Muting
• Driver
• Inverter
• Interface