MTB30P06VT4

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MTB30P06VT4

Manufacturer part number:MTB30P06VT4

Manufacturer:ON Semiconductor

Description:MOSFET P-CH 60V 30A D2PAK

Case Package:SOT-23

Datasheet:MTB30P06VT4 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tape & Reel (TR)
Published	2010
JESD-609 Code	e0
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Terminal Finish	Tin/Lead (Sn80Pb20)
Additional Feature	AVALANCHE RATED
Subcategory	Other Transistors
Voltage - Rated DC	-60V
Technology	MOSFET (Metal Oxide)
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	240
Reach Compliance Code	not_compliant
Current Rating	-30A
[email protected] Reflow Temperature-Max (s)	30
Pin Count	3
JESD-30 Code	R-PSSO-G2
Qualification Status	Not Qualified
Number of Elements	1
Power Dissipation-Max	3W Ta 125W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	3W
Case Connection	DRAIN
FET Type	P-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	80m Ω @ 15A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	2190pF @ 25V
Current - Continuous Drain (Id) @ 25°C	30A Tc
Gate Charge (Qg) (Max) @ Vgs	80nC @ 10V
Rise Time	25.9ns
Drain to Source Voltage (Vdss)	60V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±15V
Fall Time (Typ)	52.4 ns
Turn-Off Delay Time	98 ns
Continuous Drain Current (ID)	30A
Gate to Source Voltage (Vgs)	15V
Drain-source On Resistance-Max	0.08Ohm
Drain to Source Breakdown Voltage	-60V
Pulsed Drain Current-Max (IDM)	105A
Avalanche Energy Rating (Eas)	450 mJ
RoHS Status	Non-RoHS Compliant
Lead Free	Contains Lead