MTD6N20ET4

new-10%

Manufacturer part number:MTD6N20ET4

Manufacturer:ON Semiconductor

Description:MOSFET 200V 6A N-Channel

Case Package:SOT-23

Datasheet:MTD6N20ET4 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Lifecycle Status	LAST SHIPMENTS (Last Updated: 4 days ago)
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins	3
Packaging	Cut Tape (CT)
Published	2005
JESD-609 Code	e0
Pbfree Code	no
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
Terminal Finish	TIN LEAD
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Subcategory	FET General Purpose Power
Voltage - Rated DC	200V
Max Power Dissipation	1.75W
Technology	MOSFET (Metal Oxide)
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	240
Current Rating	6A
[email protected] Reflow Temperature-Max (s)	30
Pin Count	3
JESD-30 Code	R-PSSO-G2
Qualification Status	Not Qualified
Number of Elements	1
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	50W
Case Connection	DRAIN
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	700m Ω @ 3A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	480pF @ 25V
Current - Continuous Drain (Id) @ 25°C	6A Tc
Gate Charge (Qg) (Max) @ Vgs	21nC @ 10V
Rise Time	29ns
Fall Time (Typ)	20 ns
Turn-Off Delay Time	22 ns
Continuous Drain Current (ID)	6A
Gate to Source Voltage (Vgs)	20V
Drain Current-Max (Abs) (ID)	6A
Drain-source On Resistance-Max	0.7Ohm
Drain to Source Breakdown Voltage	200V
Pulsed Drain Current-Max (IDM)	18A
Avalanche Energy Rating (Eas)	54 mJ
RoHS Status	Non-RoHS Compliant
Lead Free	Contains Lead