MUN5113DW1T1G

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Manufacturer part number:MUN5113DW1T1G

Manufacturer:ON Semiconductor

Description:BRT TRANSISTOR, 50V, 47K/47KOHM, SOT-363 - More Details

Case Package:SOT-23

Datasheet:MUN5113DW1T1G Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	8 Weeks
Lifecycle Status	ACTIVE (Last Updated: 2 days ago)
Contact Plating	Tin
Package / Case	SOT-363-6
Surface Mount	YES
Number of Pins	6
Packaging	Tape & Reel (TR)
Published	2009
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	6
ECCN Code	EAR99
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Additional Feature	BUILT-IN BIAS RESISTOR RATIO IS 1
Subcategory	BIP General Purpose Small Signal
Voltage - Rated DC	-50V
Max Power Dissipation	250mW
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
Current Rating	-100mA
Time@Peak Reflow Temperature-Max (s)	40
Pin Count	6
Max Output Current	100mA
Operating Supply Voltage	50V
Number of Elements	2
Polarity	PNP
Element Configuration	Dual
Transistor Application	SWITCHING
Halogen Free	Halogen Free
Collector Emitter Voltage (VCEO)	50V
Max Collector Current	100mA
Collector Emitter Breakdown Voltage	50V
Max Breakdown Voltage	50V
hFE Min	80
DC Current Gain-Min (hFE)	80
Continuous Collector Current	-100mA
Height	900μm
Length	2mm
Width	1.25mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free