MUN5211DW1T1

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MUN5211DW1T1

Manufacturer part number:MUN5211DW1T1

Manufacturer:ON Semiconductor

Description:MUN5211DW1T1 datasheet pdf and Transistors - Bipolar (BJT) - Arrays, Pre-Biased product details from ON Semiconductor stock available on our website

Case Package:SOT-23

Datasheet:MUN5211DW1T1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	6-TSSOP, SC-88, SOT-363
Packaging	Cut Tape (CT)
Published	2003
JESD-609 Code	e0
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	6
ECCN Code	EAR99
Terminal Finish	Tin/Lead (Sn/Pb)
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Additional Feature	BUILT IN BIAS RESISTOR RATIO IS 1
Subcategory	BIP General Purpose Small Signal
Voltage - Rated DC	50V
Max Power Dissipation	250mW
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	240
Reach Compliance Code	not_compliant
Current Rating	100mA
Time@Peak Reflow Temperature-Max (s)	30
Base Part Number	MUN52**DW1T
Pin Count	6
JESD-30 Code	R-PDSO-G6
Qualification Status	Not Qualified
Number of Elements	2
Polarity	NPN
Element Configuration	Dual
Power Dissipation	187mW
Transistor Application	SWITCHING
Transistor Type	2 NPN - Pre-Biased (Dual)
Collector Emitter Voltage (VCEO)	250mV
Max Collector Current	100mA
DC Current Gain (hFE) (Min) @ Ic, Vce	35 @ 5mA 10V
Current - Collector Cutoff (Max)	500nA
Vce Saturation (Max) @ Ib, Ic	250mV @ 300μA, 10mA
Collector Emitter Breakdown Voltage	50V
Resistor - Base (R1)	10k Ω
Continuous Collector Current	100mA
Resistor - Emitter Base (R2)	10k Ω
RoHS Status	Non-RoHS Compliant
Lead Free	Contains Lead