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MUN5311DW1T1G

MUN5311DW1T1G

MUN5311DW1T1G

ON Semiconductor

TRANS PREBIAS NPN/PNP SOT363

SOT-23

MUN5311DW1T1G Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 8 Weeks
Lifecycle Status ACTIVE (Last Updated: 4 days ago)
Contact Plating Tin
Mounting Type Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363
Surface Mount YES
Number of Pins 6
Packaging Tape & Reel (TR)
Published 2006
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Additional Feature BUILT-IN BIAS RESISTOR RATIO 1
HTS Code 8541.21.00.95
Subcategory BIP General Purpose Small Signal
Voltage - Rated DC 50V
Max Power Dissipation 250mW
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating 100mA
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number MUN53**DW1
Pin Count 6
Max Output Current 100mA
Operating Supply Voltage 50V
Number of Elements 2
Polarity NPN, PNP
Element Configuration Dual
Power Dissipation 187mW
Transistor Application SWITCHING
Halogen Free Halogen Free
Transistor Type 1 NPN, 1 PNP - Pre-Biased (Dual)
Collector Emitter Voltage (VCEO) 50V
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 35 @ 5mA 10V
Current - Collector Cutoff (Max) 500nA
Vce Saturation (Max) @ Ib, Ic 250mV @ 300μA, 10mA
Collector Emitter Breakdown Voltage 50V
Collector Emitter Saturation Voltage 250mV
Max Breakdown Voltage 50V
hFE Min 35
Resistor - Base (R1) 10k Ω
Continuous Collector Current 100mA
Resistor - Emitter Base (R2) 10k Ω
Height 900μm
Length 2mm
Width 1.25mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
3,000 $0.04760 $0.1428
6,000 $0.04161 $0.24966
15,000 $0.03563 $0.53445
30,000 $0.03363 $1.0089
75,000 $0.03164 $2.373
150,000 $0.02831 $4.2465
MUN5311DW1T1G Product Details
Description:

The MUN5311DW1T1G is a pre-biased NPN/PNP transistor array from ON Semiconductor. It is housed in a SOT-363 package and is designed for use in low-power, low-voltage applications. The device features a low saturation voltage, low input bias current, and low output impedance. It is ideal for use in applications such as power management, motor control, and signal conditioning.

Features:

• Low saturation voltage
• Low input bias current
• Low output impedance
• High gain
• High switching speed
• High current gain
• High voltage gain
• High frequency response
• Low power consumption
• High reliability
• RoHS compliant

Applications:

The MUN5311DW1T1G is suitable for use in a variety of applications, including:

• Power management
• Motor control
• Signal conditioning
• Automotive
• Industrial
• Consumer electronics
• Telecommunications
• Medical devices

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