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RN1973(TE85L,F)

RN1973(TE85L,F)

RN1973(TE85L,F)

Toshiba Semiconductor and Storage

TRANS 2NPN PREBIAS 0.2W US6

SOT-23

RN1973(TE85L,F) Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 12 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
Published 2014
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Subcategory BIP General Purpose Small Signal
Max Power Dissipation 200mW
Number of Elements 2
Power - Max 200mW
Polarity/Channel Type NPN
Transistor Type 2 NPN - Pre-Biased (Dual)
Collector Emitter Voltage (VCEO) 300mV
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 1mA 5V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 300mV @ 250μA, 5mA
Collector Emitter Breakdown Voltage 50V
Max Breakdown Voltage 50V
Resistor - Base (R1) 47k Ω
RoHS Status RoHS Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $6.516667 $6.516667
10 $6.147799 $61.47799
100 $5.799811 $579.9811
500 $5.471520 $2735.76
1000 $5.161811 $5161.811

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