MUN5333DW1T1G

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MUN5333DW1T1G

Manufacturer part number:MUN5333DW1T1G

Manufacturer:ON Semiconductor

Description:MUN5333DW1T1G datasheet pdf and Transistors - Bipolar (BJT) - Arrays, Pre-Biased product details from ON Semiconductor stock available on our website

Case Package:SOT-23

Datasheet:MUN5333DW1T1G Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	8 Weeks
Lifecycle Status	ACTIVE (Last Updated: 2 days ago)
Contact Plating	Tin
Mounting Type	Surface Mount
Package / Case	6-TSSOP, SC-88, SOT-363
Surface Mount	YES
Number of Pins	6
Packaging	Tape & Reel (TR)
Published	2006
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	6
ECCN Code	EAR99
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Additional Feature	BUILT-IN BIAS RESISTOR RATIO 10
Subcategory	BIP General Purpose Small Signal
Voltage - Rated DC	50V
Max Power Dissipation	250mW
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
Current Rating	100mA
Time@Peak Reflow Temperature-Max (s)	40
Base Part Number	MUN53**DW1
Pin Count	6
Max Output Current	100mA
Operating Supply Voltage	50V
Number of Elements	2
Polarity	NPN, PNP
Element Configuration	Dual
Power Dissipation	187mW
Transistor Application	SWITCHING
Transistor Type	1 NPN, 1 PNP - Pre-Biased (Dual)
Collector Emitter Voltage (VCEO)	50V
Max Collector Current	100mA
DC Current Gain (hFE) (Min) @ Ic, Vce	80 @ 5mA 10V
Current - Collector Cutoff (Max)	500nA
Vce Saturation (Max) @ Ib, Ic	250mV @ 1mA, 10mA
Collector Emitter Breakdown Voltage	50V
Max Breakdown Voltage	50V
hFE Min	80
Resistor - Base (R1)	4.7k Ω
Continuous Collector Current	100mA
Resistor - Emitter Base (R2)	47k Ω
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free

Quantity	Unit Price	Ext. Price
3,000	$0.04760	$0.1428
6,000	$0.04161	$0.24966
15,000	$0.03563	$0.53445
30,000	$0.03363	$1.0089
75,000	$0.03164	$2.373
150,000	$0.02831	$4.2465