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MUN5335DW1T2G

  • MUN5335DW1T2G
  • MUN5335DW1T2G

MUN5335DW1T2G

MUN5335DW1T2G

ON Semiconductor

TRANS NPN/PNP PREBIAS 0.25W SC88

SOT-23

MUN5335DW1T2G Datasheet

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In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 8 Weeks
Lifecycle Status ACTIVE (Last Updated: 3 days ago)
Contact Plating Tin
Mounting Type Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363
Surface Mount YES
Number of Pins 6
Packaging Tape & Reel (TR)
Published 2007
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Additional Feature BUILT-IN BIAS RESISTOR RATIO IS 21.4
Subcategory BIP General Purpose Small Signal
Voltage - Rated DC 50V
Max Power Dissipation 250mW
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating 100mA
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number MUN53**DW1
Pin Count 6
Number of Elements 2
Polarity NPN, PNP
Element Configuration Dual
Power Dissipation 187mW
Transistor Type 1 NPN, 1 PNP - Pre-Biased (Dual)
Collector Emitter Voltage (VCEO) 50V
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 5mA 10V
Current - Collector Cutoff (Max) 500nA
Vce Saturation (Max) @ Ib, Ic 250mV @ 300μA, 10mA
Collector Emitter Breakdown Voltage 50V
hFE Min 80
Resistor - Base (R1) 2.2k Ω
Continuous Collector Current 100mA
Resistor - Emitter Base (R2) 47k Ω
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
3,000 $0.04760 $0.1428
6,000 $0.04161 $0.24966
15,000 $0.03563 $0.53445
30,000 $0.03363 $1.0089
75,000 $0.03164 $2.373
150,000 $0.02831 $4.2465
MUN5335DW1T2G Product Details
The ON Semiconductor MUN5335DW1T2G is a pre-biased, NPN/PNP transistor array in a SC-88 package. It is designed for use in low-power, low-voltage applications. This device features a low collector-emitter saturation voltage, low collector-emitter leakage current, and low base-emitter voltage. It is capable of operating at a maximum power dissipation of 0.25W.

Features of the MUN5335DW1T2G include:
• Low collector-emitter saturation voltage
• Low collector-emitter leakage current
• Low base-emitter voltage
• Maximum power dissipation of 0.25W
• SC-88 package

Applications of the MUN5335DW1T2G include:
• Low-power, low-voltage applications
• Automotive applications
• Industrial applications
• Consumer electronics
• Telecommunications
• Computer peripherals

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