IXFX180N085

new-10%

Manufacturer part number:IXFX180N085

Manufacturer:IXYS

Description:MOSFET N-CH 85V 180A PLUS247

Case Package:SOT-23

Datasheet:IXFX180N085 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-247-3
Number of Pins	3
Supplier Device Package	PLUS247™-3
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2000
Series	HiPerFET™
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Technology	MOSFET (Metal Oxide)
Power Dissipation-Max	560W Tc
Element Configuration	Single
Power Dissipation	560W
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	7mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id	4V @ 8mA
Input Capacitance (Ciss) (Max) @ Vds	9100pF @ 25V
Current - Continuous Drain (Id) @ 25°C	180A Tc
Gate Charge (Qg) (Max) @ Vgs	320nC @ 10V
Rise Time	90ns
Drain to Source Voltage (Vdss)	85V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	55 ns
Turn-Off Delay Time	140 ns
Continuous Drain Current (ID)	180A
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	85V
Input Capacitance	9.1nF
Drain to Source Resistance	7mOhm
Rds On Max	7 mΩ
RoHS Status	RoHS Compliant