NDC632P   Description

  These P-Channel logic level enhanced mode power field effect transistors are produced using high cell density DMOS technology unique to Fairchild. This very high-density process is specially tailored to minimize on-resistance. These devices are particularly suitable for low-voltage applications, such as laptop power management and other battery-powered circuits, where Avery Smaoutine surface mount packages require fast high-end switches and low inline power consumption.

NDC632P   Features

1-2.7A-20V.Rns=0.14 @V=-4.5V

Rpsn)=0.2Ω @VGs=-2.7V.

Proprietary SuperSOT-6 package design using copper

lead frame for superior thermal and electrical capabilities

High density cell design for extremely low Rpsion

Exceptional on-resistance and maximum DC current capability.

NDC632P    Applications

low-voltage applications

 laptop power management

other battery-powered circuits