SI4398DY-T1-E3

new-10%

Manufacturer part number:SI4398DY-T1-E3

Manufacturer:Vishay Siliconix

Description:MOSFET N-CH 20V 19A 8-SOIC

Case Package:SOT-23

Datasheet:SI4398DY-T1-E3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-SOIC (0.154, 3.90mm Width)
Number of Pins	8
Supplier Device Package	8-SO
Weight	186.993455mg
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2015
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Technology	MOSFET (Metal Oxide)
Number of Elements	1
Number of Channels	1
Power Dissipation-Max	1.6W Ta
Element Configuration	Single
Power Dissipation	1.6W
Turn On Delay Time	23 ns
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	2.8mOhm @ 25A, 10V
Vgs(th) (Max) @ Id	3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	5620pF @ 10V
Current - Continuous Drain (Id) @ 25°C	19A Ta
Gate Charge (Qg) (Max) @ Vgs	50nC @ 4.5V
Rise Time	15ns
Drain to Source Voltage (Vdss)	20V
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Fall Time (Typ)	23 ns
Turn-Off Delay Time	80 ns
Continuous Drain Current (ID)	25A
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	20V
Input Capacitance	5.62nF
Drain to Source Resistance	2.8mOhm
Rds On Max	2.8 mΩ
Height	1.55mm
Length	5mm
Width	4mm
RoHS Status	ROHS3 Compliant