NDDP010N25AZ-1H

new-10%

Manufacturer part number:NDDP010N25AZ-1H

Manufacturer:ON Semiconductor

Description:ON SEMICONDUCTOR NDDP010N25AZ-1H MOSFET Transistor, N Channel, 10 A, 250 V, 0.32 ohm, 10 V, 4.5 V

Case Package:SOT-23

Datasheet:NDDP010N25AZ-1H Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	4 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-251-3 Short Leads, IPak, TO-251AA
Number of Pins	3
Weight	3.949996g
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2010
JESD-609 Code	e6
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Terminal Finish	Tin/Bismuth (Sn/Bi)
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Number of Elements	1
Number of Channels	1
Power Dissipation-Max	1W Ta 52W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN
Turn On Delay Time	18 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	420m Ω @ 5A, 10V
Vgs(th) (Max) @ Id	4.5V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds	980pF @ 20V
Current - Continuous Drain (Id) @ 25°C	10A Ta
Gate Charge (Qg) (Max) @ Vgs	16nC @ 10V
Rise Time	26ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Fall Time (Typ)	31 ns
Turn-Off Delay Time	44 ns
Continuous Drain Current (ID)	10A
Threshold Voltage	4.5V
Gate to Source Voltage (Vgs)	30V
Drain-source On Resistance-Max	0.42Ohm
Drain to Source Breakdown Voltage	250V
Height	7mm
Length	6.5mm
Width	2.3mm
REACH SVHC	No SVHC
RoHS Status	RoHS Compliant
Lead Free	Lead Free