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STFI11N65M2

STFI11N65M2

STFI11N65M2

STMicroelectronics

STMICROELECTRONICS STFI11N65M2 Power MOSFET, N Channel, 7 A, 650 V, 0.6 ohm, 10 V, 3 V

SOT-23

STFI11N65M2 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-262-3 Full Pack, I2Pak
Number of Pins 3
Weight 2.240009g
Operating Temperature 150°C TJ
Packaging Tube
Series MDmesh™ II Plus
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Resistance 600mOhm
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number STFI11N
Number of Channels 1
Power Dissipation-Max 25W Tc
Turn On Delay Time 9.5 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 670m Ω @ 3.5A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 410pF @ 100V
Current - Continuous Drain (Id) @ 25°C 7A Tc
Gate Charge (Qg) (Max) @ Vgs 12.5nC @ 10V
Rise Time 7.5ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±25V
Fall Time (Typ) 15 ns
Turn-Off Delay Time 26 ns
Continuous Drain Current (ID) 7A
Threshold Voltage 3V
Gate to Source Voltage (Vgs) 25V
Drain to Source Breakdown Voltage 650V
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant

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