NDF0610 Description

This high cell density, DMOS P-Channel enhancement mode power field effect transistor is made exclusively by Fairchild. The on-state resistance of this extremely high density technology has been reduced, and it offers durable, dependable performance and quick switching. They can deliver pulsed currents up to 1A and may be employed with little effort in the majority of applications requiring up to 180mA DC. This product is best suited for low voltage applications that need a high side switch with a low current.

NDF0610 Features

• -0.18 and -0.12A, -60V. RDS(ON) = 10W

• Voltage controlled p-channel small signal switch

• High density cell design for low RDS(ON)

• TO-92 and SOT-23 packages for both through hole and surface mount applications

• High saturation current

NDF0610 Applications

• Power Management

• Consumer Electronics

• Portable Devices

• Industrial