AUIRFU8405 Description

AUIRFU8405 FET General Purpose Power, Specifically designed for Automotive applications, this HEXFET? Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and wide variety of other applications. Infineon's Automotive-qualified COOLiRFET? Power MOSFETs achieve very low on-resistance (RDS(on)), very low conduction loss, resulting in highly efficient switching speeds of high current signals. They deliver higher efficiency, power density and reliability in harsh signal environments with robust avalanche performance, low conduction losses, fast switching speeds, and 175°C maximum junction temperature.
AUIRFU8405 Features

● Advanced Process Technology
● New Ultra Low On-Resistance
● 175°C Operating Temperature
● Fast Switching
● Repetitive Avalanche Allowed up to Tjmax
● Lead-Free, RoHS Compliant
● Automotive Qualified
AUIRFU8405 Applications

● Electric Power Steering (EPS)
● Battery Switch
● Start/Stop Micro Hybrid
● Heavy Loads
● DC-DC Converter