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PMZ200UNEYL

PMZ200UNEYL

PMZ200UNEYL

Nexperia USA Inc.

MOSFET N-CH 30V SOT883

SOT-23

PMZ200UNEYL Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 8 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SC-101, SOT-883
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Cut Tape (CT)
Published 2015
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Technology MOSFET (Metal Oxide)
Terminal Position BOTTOM
Terminal Form NO LEAD
Pin Count 3
Reference Standard IEC-60134
JESD-30 Code R-PBCC-N3
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 350mW Ta 6.25W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 250m Ω @ 1.4A, 4.5V
Vgs(th) (Max) @ Id 950mV @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 89pF @ 15V
Current - Continuous Drain (Id) @ 25°C 1.4A Ta
Gate Charge (Qg) (Max) @ Vgs 2.7nC @ 4.5V
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On,Min Rds On) 1.5V 4.5V
Vgs (Max) ±8V
Continuous Drain Current (ID) 1.4A
Drain-source On Resistance-Max 0.25Ohm
DS Breakdown Voltage-Min 30V
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
10,000 $0.08100 $0.81
30,000 $0.07657 $2.2971
50,000 $0.06903 $3.4515
100,000 $0.06770 $6.77

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