NDP603AL Description

This high cell density, DMOS N-Channel logic level enhancement mode power field effect transistor is made exclusively by Fairchild. This extremely dense technique is specifically designed to reduce on-state resistance. In low voltage applications like DC/DC converters and high efficiency switching circuits, where quick switching, little in-line power loss, and resistance to transients are required, these devices are especially well-suited.

NDP603AL Features

• 25A, 30V. RDS(ON) = 0.022W @ VGS=10V.

• Critical DC electrical parameters specified at elevated temperature.

• Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor.

• High density cell design for extremely low RDS(ON).

• 175°C maximum junction temperature rating.

NDP603AL Applications

• Power Management

• Consumer Electronics

• Portable Devices

• Industrial