AUIRFR6215TRL datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website
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AUIRFR6215TRL Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
16 Weeks
Contact Plating
Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~175°C TJ
Packaging
Tape & Reel (TR)
Published
2011
Series
HEXFET®
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
ECCN Code
EAR99
Additional Feature
AVALANCHE RATED, HIGH RELIABILITY
Subcategory
Other Transistors
Technology
MOSFET (Metal Oxide)
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
[email protected] Reflow Temperature-Max (s)
30
JESD-30 Code
R-PSSO-G2
Number of Elements
1
Number of Channels
1
Power Dissipation-Max
110W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
110W
Case Connection
DRAIN
Turn On Delay Time
14 ns
FET Type
P-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
295m Ω @ 6.6A, 10V
Vgs(th) (Max) @ Id
4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
860pF @ 25V
Current - Continuous Drain (Id) @ 25°C
13A Tc
Gate Charge (Qg) (Max) @ Vgs
66nC @ 10V
Rise Time
36ns
Drain to Source Voltage (Vdss)
150V
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±20V
Fall Time (Typ)
37 ns
Turn-Off Delay Time
53 ns
Continuous Drain Current (ID)
-13A
JEDEC-95 Code
TO-252AA
Gate to Source Voltage (Vgs)
20V
Drain-source On Resistance-Max
0.295Ohm
Drain to Source Breakdown Voltage
-150V
Pulsed Drain Current-Max (IDM)
44A
Max Junction Temperature (Tj)
175°C
Height
2.52mm
Length
6.7056mm
Width
6.22mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
3,000
$0.92278
$2.76834
AUIRFR6215TRL Product Details
AUIRFR6215TRL Description
AUIRFR6215TRL is a type of HEXFET? power MOSFET developed by Infineon Technologies for low on-resistance per silicon area utilizing the latest processing techniques. Fast switching speed and ruggedized device design can also be delivered. All these features enable this device to be well suited for automotive and other applications.