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NDS336P

NDS336P

NDS336P

ON Semiconductor

NDS336P datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website

SOT-23

NDS336P Datasheet

non-compliant

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Specifications
Name Value
Type Parameter
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 1997
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Voltage - Rated DC -20V
Technology MOSFET (Metal Oxide)
Current Rating -1.2A
Number of Elements 1
Power Dissipation-Max 500mW Ta
Element Configuration Single
Power Dissipation 500mW
FET Type P-Channel
Rds On (Max) @ Id, Vgs 200m Ω @ 1.3A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 360pF @ 10V
Current - Continuous Drain (Id) @ 25°C 1.2A Ta
Gate Charge (Qg) (Max) @ Vgs 8.5nC @ 4.5V
Rise Time 29ns
Drain to Source Voltage (Vdss) 20V
Drive Voltage (Max Rds On,Min Rds On) 2.7V 4.5V
Vgs (Max) ±8V
Fall Time (Typ) 29 ns
Turn-Off Delay Time 33 ns
Continuous Drain Current (ID) 1.2A
Gate to Source Voltage (Vgs) 8V
Drain to Source Breakdown Voltage -20V
RoHS Status RoHS Compliant
Lead Free Lead Free
NDS336P Product Details

NDS336P Description


NDS336P is a -20v P-Channel Logic Level Enhancement Mode Field Effect Transistor. SuperSOT?-3 P-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high-density process is specially tailored to minimize on-state resistance. The NDS336P is particularly suited for low voltage applications such as notebook computer power management, portable electronics, and other battery-powered circuits where fast high-side switching and low in-line power loss are needed in a very small outline surface mount package.



NDS336P Features


  • -1.2 A, -20 V, RDS(ON) = 0.27 W @ VGS= -2.7 V

  •                        RDS(ON) = 0.2 W @ VGS = -4.5 V.

  • Very low-level gate drive requirements allow direct operation in 3V circuits. VGS(th) < 1.0V.

  • Proprietary package design using the copper lead frame for superior thermal and electrical capabilities.

  • High-density cell design for extremely low RDS(ON).

  • Exceptional on-resistance and maximum DC current capability.

  • Compact industry-standard SOT-23 Surface Mount package.



NDS336P Applications


  • Notebook computer power management

  • Portable electronics

  • Portable audio players? 

  • Portable computers? 

  • Handheld game consoles

  • Portable software


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