NDC651N Description

This high cell density, DMOS N-Channel logic level enhancement mode power field effect transistor is made exclusively by Fairchild. The goal of this extremely high density method is to reduce on-state resistance. These components are especially well suited for low voltage applications in laptops, cell phones, PCMICA cards, and other battery-operated circuits where fast switching and minimal in-line power loss are required in a very compact shape surface mount package.

NDC651N Features

• 3.2A, 30V. RDS(ON) = 0.09W @ VGS = 4.5V

• RDS(ON) = 0.06W @ VGS = 10V.

• Proprietary SuperSOTTM-6 package design using copper lead frame for superior thermal and electrical capabilities.

• High density cell design for extremely low RDS(ON).

• Exceptional on-resistance and maximum DC current capability.

NDC651N Applications

• Power Management

• Consumer Electronics

• Portable Devices

• Industrial