NDS351AN datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website
SOT-23
NDS351AN Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
10 Weeks
Lifecycle Status
ACTIVE (Last Updated: 3 days ago)
Contact Plating
Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Number of Pins
3
Weight
30mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2003
Series
PowerTrench®
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Termination
SMD/SMT
ECCN Code
EAR99
Resistance
160MOhm
Additional Feature
LOGIC LEVEL COMPATIBLE
Subcategory
FET General Purpose Power
Voltage - Rated DC
30V
Technology
MOSFET (Metal Oxide)
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Current Rating
1.2A
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Qualification Status
Not Qualified
Number of Elements
1
Number of Channels
1
Power Dissipation-Max
500mW Ta
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
500mW
Turn On Delay Time
3 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
160m Ω @ 1.4A, 10V
Vgs(th) (Max) @ Id
3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
145pF @ 15V
Current - Continuous Drain (Id) @ 25°C
1.4A Ta
Gate Charge (Qg) (Max) @ Vgs
1.8nC @ 4.5V
Rise Time
8ns
Drive Voltage (Max Rds On,Min Rds On)
4.5V 10V
Vgs (Max)
±20V
Fall Time (Typ)
8 ns
Turn-Off Delay Time
16 ns
Continuous Drain Current (ID)
1.2A
Threshold Voltage
2.1V
Gate to Source Voltage (Vgs)
20V
Drain to Source Breakdown Voltage
30V
Dual Supply Voltage
30V
Max Junction Temperature (Tj)
150°C
Nominal Vgs
2.1 V
Height
1.22mm
Width
3.05mm
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
NDS351AN Product Details
NDS351AN Description
These N-Channel Logic Level MOSFETs are produced using ON Semiconductor’s advanced PowerTrench process that has been specially tailored
to minimize the on-state resistance and yet maintain superior switching performance. These devices are particularly suited for low voltage applications in notebook computers, portable phones, PCMCIA cards, and other battery-powered circuits where fast switching and low in-line power loss are needed in a very small outline surface mount package.