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NDS355AN-NB9L007A

  • NDS355AN-NB9L007A
  • NDS355AN-NB9L007A

NDS355AN-NB9L007A

NDS355AN-NB9L007A

ON Semiconductor

MOSFET (Metal Oxide) N-Channel 85m Ω @ 1.9A, 10V ±20V 195pF @ 15V 5nC @ 5V 30V TO-236-3, SC-59, SOT-23-3

SOT-23

NDS355AN-NB9L007A Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Lifecycle Status LAST SHIPMENTS (Last Updated: 1 week ago)
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Operating Temperature -55°C~150°C TJ
Published 1998
Part Status Obsolete
Moisture Sensitivity Level (MSL) Vendor Undefined
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 500mW Ta
FET Type N-Channel
Rds On (Max) @ Id, Vgs 85m Ω @ 1.9A, 10V
Vgs(th) (Max) @ Id 2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 195pF @ 15V
Current - Continuous Drain (Id) @ 25°C 1.7A Ta
Gate Charge (Qg) (Max) @ Vgs 5nC @ 5V
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
RoHS Status RoHS Compliant
NDS355AN-NB9L007A Product Details

NDS355AN-NB9L007A Overview


With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 195pF @ 15V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 30V.Using drive voltage (4.5V 10V) reduces this device's overall power consumption.

NDS355AN-NB9L007A Features


a 30V drain to source voltage (Vdss)


NDS355AN-NB9L007A Applications


There are a lot of ON Semiconductor
NDS355AN-NB9L007A applications of single MOSFETs transistors.


  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification

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