NDS8410A datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website
SOT-23
NDS8410A Datasheet
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Specifications
Name
Value
Type
Parameter
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
8-SOIC (0.154, 3.90mm Width)
Number of Pins
8
Weight
130mg
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2004
Series
PowerTrench®
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Technology
MOSFET (Metal Oxide)
Number of Elements
1
Power Dissipation-Max
2.5W Ta
Element Configuration
Single
Power Dissipation
2.5W
FET Type
N-Channel
Rds On (Max) @ Id, Vgs
12m Ω @ 10.8A, 10V
Vgs(th) (Max) @ Id
3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
1620pF @ 15V
Current - Continuous Drain (Id) @ 25°C
10.8A Ta
Gate Charge (Qg) (Max) @ Vgs
22nC @ 5V
Rise Time
6ns
Drive Voltage (Max Rds On,Min Rds On)
4.5V 10V
Vgs (Max)
±20V
Fall Time (Typ)
12 ns
Turn-Off Delay Time
27 ns
Continuous Drain Current (ID)
10.8A
Gate to Source Voltage (Vgs)
20V
Drain to Source Breakdown Voltage
30V
Radiation Hardening
No
RoHS Status
RoHS Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.60000
$0.6
500
$0.594
$297
1000
$0.588
$588
1500
$0.582
$873
2000
$0.576
$1152
2500
$0.57
$1425
NDS8410A Product Details
NDS8410A Description
UltraFET smart devices combine the characteristics of achieving reference efficiency in power conversion applications. Optimized for RDS (on), low ESR, low and Miller gate charging, these devices are ideal for high frequency DC-DC converters
NDS8410A Features
10.8A30VRpsoN)=12mΩ@VGs=10V
RDs(ON)=17mΩ@VGs=4.5V
·Ultra-low gate charge
·High performance trench technology for extremely low RDS(ON)