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NDS8410A

NDS8410A

NDS8410A

ON Semiconductor

NDS8410A datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website

SOT-23

NDS8410A Datasheet

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Specifications
Name Value
Type Parameter
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8
Weight 130mg
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2004
Series PowerTrench®
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Number of Elements 1
Power Dissipation-Max 2.5W Ta
Element Configuration Single
Power Dissipation 2.5W
FET Type N-Channel
Rds On (Max) @ Id, Vgs 12m Ω @ 10.8A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1620pF @ 15V
Current - Continuous Drain (Id) @ 25°C 10.8A Ta
Gate Charge (Qg) (Max) @ Vgs 22nC @ 5V
Rise Time 6ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 12 ns
Turn-Off Delay Time 27 ns
Continuous Drain Current (ID) 10.8A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 30V
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.60000 $0.6
500 $0.594 $297
1000 $0.588 $588
1500 $0.582 $873
2000 $0.576 $1152
2500 $0.57 $1425
NDS8410A Product Details

NDS8410A   Description


  UltraFET smart devices combine the characteristics of achieving reference efficiency in power conversion applications. Optimized for RDS (on), low ESR, low and Miller gate charging, these devices are ideal for high frequency DC-DC converters


NDS8410A   Features

10.8A30VRpsoN)=12mΩ@VGs=10V

RDs(ON)=17mΩ@VGs=4.5V

·Ultra-low gate charge

·High performance trench technology for extremely low RDS(ON)

·High power and current handling capability


NDS8410A   Applications

 high frequency DC-DC converters


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