NTS2101PT1G

new-10%

Manufacturer part number:NTS2101PT1G

Manufacturer:ON Semiconductor

Description:MOSFET P-CH 8V 1.4A SOT-323

Case Package:SOT-23

Datasheet:NTS2101PT1G Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	4 Weeks
Lifecycle Status	ACTIVE (Last Updated: 3 days ago)
Mounting Type	Surface Mount
Package / Case	SC-70, SOT-323
Surface Mount	YES
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	1998
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Resistance	65MOhm
Terminal Finish	Tin (Sn)
Subcategory	Other Transistors
Voltage - Rated DC	-8V
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
Current Rating	-1.4A
[email protected] Reflow Temperature-Max (s)	40
Pin Count	3
Number of Elements	1
Power Dissipation-Max	290mW Ta
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	290mW
Turn On Delay Time	6.2 ns
FET Type	P-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	100m Ω @ 1A, 4.5V
Vgs(th) (Max) @ Id	700mV @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	640pF @ 8V
Current - Continuous Drain (Id) @ 25°C	1.4A Ta
Gate Charge (Qg) (Max) @ Vgs	6.4nC @ 5V
Rise Time	15ns
Drive Voltage (Max Rds On,Min Rds On)	1.8V 4.5V
Vgs (Max)	±8V
Fall Time (Typ)	15 ns
Turn-Off Delay Time	26 ns
Continuous Drain Current (ID)	1.4A
Threshold Voltage	-700mV
Gate to Source Voltage (Vgs)	8V
Drain to Source Breakdown Voltage	-8V
Nominal Vgs	-700 mV
Height	900μm
Length	2.2mm
Width	1.35mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free