NDS8434A datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website
SOT-23
NDS8434A Datasheet
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Specifications
Name
Value
Type
Parameter
Mounting Type
Surface Mount
Package / Case
8-SOIC (0.154, 3.90mm Width)
Supplier Device Package
8-SOIC
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
1997
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Technology
MOSFET (Metal Oxide)
Power Dissipation-Max
2.5W Ta
FET Type
P-Channel
Rds On (Max) @ Id, Vgs
24mOhm @ 7.9A, 4.5V
Vgs(th) (Max) @ Id
1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
1730pF @ 10V
Current - Continuous Drain (Id) @ 25°C
7.8A Ta
Gate Charge (Qg) (Max) @ Vgs
55nC @ 4.5V
Drain to Source Voltage (Vdss)
20V
Drive Voltage (Max Rds On,Min Rds On)
2.5V 4.5V
Vgs (Max)
±8V
Pricing & Ordering
Quantity
Unit Price
Ext. Price
2,500
$0.61125
$1.2225
NDS8434A Product Details
NDS8434A Description
NDS8434A is a -20v Single P-Channel Enhancement Mode Field Effect Transistor. The P-Channel enhancement mode power field effect transistor NDS8434A is produced using ON Semiconductor's proprietary, high cell density, DMOS technology. This very high density process is specially tailored to minimize on-state resistance and provide superior switching performance. The NDS8434A is particularly suited for low voltage applications such as notebook computer power management and other battery-powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.
NDS8434A Features
-6.5 A, -20 V rDS(ON) = 35 mΩ @ VGS = -4.5 V
rDS(ON) = 50 mΩ @ VGS = -2.7 V
High-Density Cell Design for Extremely Low rDS(ON)
High Power and Current Handling Capability in a Widely Used Surface Mount Package