TPC6012(TE85L,F,M)

new-10%

Manufacturer part number:TPC6012(TE85L,F,M)

Manufacturer:Toshiba Semiconductor and Storage

Description:MOSFET N-CH 20V 6A VS6

Case Package:SOT-23

Datasheet:TPC6012(TE85L,F,M) Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	12 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	SOT-23-6 Thin, TSOT-23-6
Number of Pins	6
Supplier Device Package	VS-6 (2.9x2.8)
Operating Temperature	150°C TJ
Packaging	Tape & Reel (TR)
Published	2009
Series	U-MOSIV
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Technology	MOSFET (Metal Oxide)
Number of Elements	1
Power Dissipation-Max	700mW Ta
Power Dissipation	2.2W
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	20mOhm @ 3A, 4.5V
Vgs(th) (Max) @ Id	1.2V @ 200μA
Input Capacitance (Ciss) (Max) @ Vds	630pF @ 10V
Current - Continuous Drain (Id) @ 25°C	6A Ta
Gate Charge (Qg) (Max) @ Vgs	9nC @ 5V
Rise Time	5ns
Drain to Source Voltage (Vdss)	20V
Drive Voltage (Max Rds On,Min Rds On)	2.5V 4.5V
Vgs (Max)	±12V
Fall Time (Typ)	10 ns
Continuous Drain Current (ID)	6A
Gate to Source Voltage (Vgs)	12V
Input Capacitance	630pF
Rds On Max	20 mΩ
Radiation Hardening	No
RoHS Status	RoHS Compliant