NGTD28T65F2WP datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available on our website
SOT-23
NGTD28T65F2WP Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
5 Weeks
Lifecycle Status
ACTIVE (Last Updated: 1 week ago)
Mounting Type
Surface Mount
Package / Case
Die
Operating Temperature
-55°C~175°C TJ
Packaging
Bulk
Published
2016
Pbfree Code
yes
Part Status
Active
Input Type
Standard
Voltage - Collector Emitter Breakdown (Max)
650V
Vce(on) (Max) @ Vge, Ic
2V @ 15V, 75A
IGBT Type
Trench Field Stop
Current - Collector Pulsed (Icm)
200A
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
88
$4.21830
$371.2104
NGTD28T65F2WP Product Details
NGTD28T65F2WP Description
NGTD28T65F2WP is a 650v IGBT Die. The NGTD28T65F2WP Trench Field Stop II IGBT Die can be applied in Industrial Motor Drives, Solar Inverters, UPS Systems, and Welding applications due to the following features. The Operating and Storage Temperature Range is between -55 and 175℃. And the transistor NGTD28T65F2WP is in the Bulk package.
NGTD28T65F2WP Features
Extremely Efficient Trench with Field Stop Technology
Low VCE(sat) Loss Reduces System Power Dissipation
Pulsed Collector Current (Note 2): 200A
Short Circuit Withstand Time, VGE = 15 V, VCE = 500V, TJ ≤ 150°C: 50μs