NIF9N05CLT3G

new-10%

Manufacturer part number:NIF9N05CLT3G

Manufacturer:ON Semiconductor

Description:MOSFET N-CH 59V 2.6A SOT223

Case Package:SOT-23

Datasheet:NIF9N05CLT3G Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Lifecycle Status	CONSULT SALES OFFICE (Last Updated: 4 days ago)
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-261-4, TO-261AA
Number of Pins	4
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2006
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	3 (168 Hours)
Number of Terminations	4
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Additional Feature	LOGIC LEVEL COMPATIBLE
Subcategory	FET General Purpose Power
Voltage - Rated DC	52V
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
Current Rating	2.6A
[email protected] Reflow Temperature-Max (s)	40
Pin Count	4
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE AND RESISTOR
Power Dissipation-Max	1.69W Ta
Operating Mode	ENHANCEMENT MODE
Power Dissipation	1.69W
Case Connection	DRAIN
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	125m Ω @ 2.6A, 10V
Vgs(th) (Max) @ Id	2.5V @ 100μA
Input Capacitance (Ciss) (Max) @ Vds	250pF @ 35V
Current - Continuous Drain (Id) @ 25°C	2.6A Ta
Gate Charge (Qg) (Max) @ Vgs	7nC @ 4.5V
Rise Time	290ns
Drain to Source Voltage (Vdss)	59V
Drive Voltage (Max Rds On,Min Rds On)	3V 10V
Vgs (Max)	±15V
Fall Time (Typ)	290 ns
Turn-Off Delay Time	1.54 μs
Continuous Drain Current (ID)	2.6A
Gate to Source Voltage (Vgs)	15V
Drain to Source Breakdown Voltage	52V
Radiation Hardening	No
RoHS Status	RoHS Compliant
Lead Free	Lead Free