QST4TR datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ROHM Semiconductor stock available on our website
SOT-23
QST4TR Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
SOT-23-6 Thin, TSOT-23-6
Number of Pins
6
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Published
2005
JESD-609 Code
e1
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
6
ECCN Code
EAR99
Subcategory
Other Transistors
Max Power Dissipation
1.25W
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
[email protected] Reflow Temperature-Max (s)
10
Base Part Number
QST
Pin Count
6
Number of Elements
1
Element Configuration
Single
Transistor Application
AMPLIFIER
Gain Bandwidth Product
280MHz
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
12V
Max Collector Current
3A
DC Current Gain (hFE) (Min) @ Ic, Vce
270 @ 500mA 2V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
250mV @ 30mA, 1.5A
Collector Emitter Breakdown Voltage
12V
Current - Collector (Ic) (Max)
3A
Transition Frequency
280MHz
Collector Base Voltage (VCBO)
15V
Emitter Base Voltage (VEBO)
6V
hFE Min
270
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$2.193522
$2.193522
10
$2.069360
$20.6936
100
$1.952226
$195.2226
500
$1.841723
$920.8615
1000
$1.737475
$1737.475
QST4TR Product Details
QST4TR Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 270 @ 500mA 2V.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 250mV @ 30mA, 1.5A.Keeping the emitter base voltage at 6V can result in a high level of efficiency.Single BJT transistor contains a transSingle BJT transistorion frequency of 280MHz.When collector current reaches its maximum, it can reach 3A volts.
QST4TR Features
the DC current gain for this device is 270 @ 500mA 2V the vce saturation(Max) is 250mV @ 30mA, 1.5A the emitter base voltage is kept at 6V a transition frequency of 280MHz
QST4TR Applications
There are a lot of ROHM Semiconductor QST4TR applications of single BJT transistors.