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NSB1706DMW5T1G

  • NSB1706DMW5T1G
  • NSB1706DMW5T1G

NSB1706DMW5T1G

NSB1706DMW5T1G

ON Semiconductor

ON SEMICONDUCTOR - NSB1706DMW5T1G - BRT TRANSISTOR, 50V, 47K/4.7KOHM, SOT353, FULL REEL

SOT-23

NSB1706DMW5T1G Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 8 Weeks
Lifecycle Status ACTIVE (Last Updated: 3 days ago)
Contact Plating Tin
Mounting Type Surface Mount
Package / Case 5-TSSOP, SC-70-5, SOT-353
Surface Mount YES
Number of Pins 5
Packaging Tape & Reel (TR)
Published 2009
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Additional Feature BUILT-IN BIAS RESISTOR
Subcategory BIP General Purpose Small Signal
Voltage - Rated DC 50V
Max Power Dissipation 250mW
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating 100mA
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number NSB1706
Pin Count 5
Max Output Current 100mA
Operating Supply Voltage 50V
Number of Elements 2
Polarity NPN
Configuration COMMON EMITTER, 2 ELEMENTS WITH BUILT-IN RESISTOR
Power Dissipation 187mW
Transistor Application SWITCHING
Transistor Type 2 NPN - Pre-Biased (Dual)
Collector Emitter Voltage (VCEO) 50V
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 5mA 10V
Current - Collector Cutoff (Max) 500nA
Vce Saturation (Max) @ Ib, Ic 250mV @ 1mA, 10mA
Collector Emitter Breakdown Voltage 50V
Collector Emitter Saturation Voltage 250mV
Max Breakdown Voltage 50V
Collector Base Voltage (VCBO) 50V
Emitter Base Voltage (VEBO) 6V
hFE Min 80
Resistor - Base (R1) 4.7k Ω
Continuous Collector Current 100mA
Resistor - Emitter Base (R2) 47k Ω
Height 1mm
Length 2.2mm
Width 1.35mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
3,000 $0.05192 $0.15576
6,000 $0.04515 $0.2709
15,000 $0.03838 $0.5757
30,000 $0.03612 $1.0836
75,000 $0.03386 $2.5395
150,000 $0.03010 $4.515
NSB1706DMW5T1G Product Details
Description: The ON Semiconductor NSB1706DMW5T1G is a pre-biased Bipolar Junction Transistor (BJT) Array in a SOT353 package. It is designed for use in low voltage, low power applications.

Features:
• Pre-biased for low voltage, low power applications
• Low voltage operation: 50V
• High current gain: 47K/4.7KOhm
• SOT353 package
• Full reel

Applications: The ON Semiconductor NSB1706DMW5T1G is suitable for use in low voltage, low power applications such as audio amplifiers, power supplies, and motor control circuits. It can also be used in automotive, industrial, and consumer electronics.

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