NSBA113EDXV6T1G

new-10%

Manufacturer part number:NSBA113EDXV6T1G

Manufacturer:ON Semiconductor

Description:Bipolar Transistors - Pre-Biased SS SOT563 RSTR XSTR TR

Case Package:SOT-23

Datasheet:NSBA113EDXV6T1G Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	17 Weeks
Lifecycle Status	ACTIVE (Last Updated: 2 days ago)
Mounting Type	Surface Mount
Package / Case	6-TSSOP, SC-88, SOT-363
Surface Mount	YES
Number of Pins	6
Weight	8.193012mg
Packaging	Tape & Reel (TR)
Published	2012
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	6
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Additional Feature	BUILT IN BIAS RESISTOR RATIO IS 1
Subcategory	BIP General Purpose Small Signal
Max Power Dissipation	250mW
Terminal Form	FLAT
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	6
Qualification Status	Not Qualified
Number of Elements	2
Polarity	PNP
Element Configuration	Dual
Transistor Type	2 PNP - Pre-Biased (Dual)
Collector Emitter Voltage (VCEO)	250mV
Max Collector Current	100mA
DC Current Gain (hFE) (Min) @ Ic, Vce	3 @ 5mA 10V
Current - Collector Cutoff (Max)	500nA
Vce Saturation (Max) @ Ib, Ic	250mV @ 5mA, 10mA
Collector Emitter Breakdown Voltage	50V
hFE Min	3
Resistor - Base (R1)	1k Ω
Continuous Collector Current	-100mA
Resistor - Emitter Base (R2)	1k Ω
Height	550μm
Length	1.6mm
Width	1.2mm
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free