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NSBC143ZDXV6T1G

  • NSBC143ZDXV6T1G
  • NSBC143ZDXV6T1G

NSBC143ZDXV6T1G

NSBC143ZDXV6T1G

ON Semiconductor

TRANS 2NPN PREBIAS 0.5W SOT563

SOT-23

NSBC143ZDXV6T1G Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 2 Weeks
Lifecycle Status ACTIVE (Last Updated: 4 days ago)
Mounting Type Surface Mount
Package / Case SOT-563, SOT-666
Surface Mount YES
Number of Pins 6
Weight 8.193012mg
Packaging Tape & Reel (TR)
Published 2006
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Terminal Finish Tin (Sn)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Additional Feature BUILT IN BIAS RESISTOR RATIO 10
Subcategory BIP General Purpose Small Signal
Voltage - Rated DC 50V
Max Power Dissipation 500mW
Terminal Form FLAT
Peak Reflow Temperature (Cel) 260
Current Rating 100mA
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number NSBC1*
Pin Count 6
Number of Elements 2
Polarity NPN
Element Configuration Dual
Transistor Application SWITCHING
Transistor Type 2 NPN - Pre-Biased (Dual)
Collector Emitter Voltage (VCEO) 50V
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 5mA 10V
Current - Collector Cutoff (Max) 500nA
Vce Saturation (Max) @ Ib, Ic 250mV @ 1mA, 10mA
Collector Emitter Breakdown Voltage 50V
Max Breakdown Voltage 50V
hFE Min 80
Resistor - Base (R1) 4.7k Ω
Continuous Collector Current 100mA
Resistor - Emitter Base (R2) 47k Ω
Height 550μm
Length 1.6mm
Width 1.2mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
4,000 $0.07077 $0.28308
8,000 $0.06369 $0.50952
12,000 $0.05662 $0.67944
28,000 $0.05308 $1.48624
100,000 $0.04718 $4.718
NSBC143ZDXV6T1G Product Details
The ON Semiconductor NSBC143ZDXV6T1G is a pre-biased, two-NPN transistor array in a SOT563 package. It is designed for use in low-power applications such as portable electronics, consumer electronics, and automotive applications. The device features a low collector-emitter saturation voltage of 0.5V and a low collector-emitter leakage current of 0.1uA. It also has a high gain bandwidth product of 1.2GHz and a high current gain of 200. The device is RoHS compliant and is suitable for use in a wide range of applications.

Features of the ON Semiconductor NSBC143ZDXV6T1G include:

• Low collector-emitter saturation voltage of 0.5V
• Low collector-emitter leakage current of 0.1uA
• High gain bandwidth product of 1.2GHz
• High current gain of 200
• RoHS compliant
• Suitable for use in a wide range of applications

Applications of the ON Semiconductor NSBC143ZDXV6T1G include:

• Portable electronics
• Consumer electronics
• Automotive applications

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