NSBA114TDXV6T5G

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Manufacturer part number:NSBA114TDXV6T5G

Manufacturer:ON Semiconductor

Description:Dual PNP Bipolar Digital Transistor (BRT)

Case Package:SOT-23

Datasheet:NSBA114TDXV6T5G Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	17 Weeks
Lifecycle Status	ACTIVE (Last Updated: 1 week ago)
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	SOT-563, SOT-666
Number of Pins	6
Packaging	Tape & Reel (TR)
Published	2012
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	6
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Additional Feature	BUILT IN BIAS RESISTOR
Subcategory	BIP General Purpose Small Signal
Voltage - Rated DC	-50V
Max Power Dissipation	500mW
Terminal Form	FLAT
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Current Rating	-100mA
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Base Part Number	NSBA1*
Pin Count	6
Qualification Status	Not Qualified
Number of Elements	2
Polarity	PNP
Element Configuration	Dual
Power Dissipation	357mW
Transistor Type	2 PNP - Pre-Biased (Dual)
Collector Emitter Voltage (VCEO)	250mV
Max Collector Current	100mA
DC Current Gain (hFE) (Min) @ Ic, Vce	160 @ 5mA 10V
Current - Collector Cutoff (Max)	500nA
Vce Saturation (Max) @ Ib, Ic	250mV @ 1mA, 10mA
Collector Emitter Breakdown Voltage	50V
hFE Min	160
Resistor - Base (R1)	10k Ω
Continuous Collector Current	-100mA
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free